Deep traps at GaAs/GaAs interface grown by MBE-interruption growth technique

Materials Science and Engineering C

Volumn 27, Issue 5-8 SPEC. ISS., 2007, Pages 1069-1073

  Kaniewska, M ^a   Engstrom O ^b  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

C V profiling; Defects; DLTS; MBE GaAs GaAs growth interrupted interface

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE; CONDUCTION BANDS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

ACCEPTOR-LIKE TRAPS; C-V PROFILING; INTERRUPTED INTERFACE; SPATIAL DISTRIBUTIONS;

INTERFACES (MATERIALS);

EID: 34547662074     PISSN: 09284931     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msec.2006.09.012     Document Type: Article

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