Formation of (Zn,Co)O by annealing of Co overlayers on ZnO

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 4, 2007, Pages 1536-1541

  Dumont, J ^a   Mugumaoderha C , M ^a   Seldrum, T ^a   Frising, F ^a   Moisson, C ^b   Turover, D ^b   Sporken, R ^b,c  

^a UNIVERSITY OF NAMUR   (Belgium)

^b SAVOIE TECHNOLAC   (France)

^c UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXPONENTIAL ATTENUATION; MATRIX EFFECTS; ROOM TEMPERATURE;

ANNEALING; AUGER ELECTRON SPECTROSCOPY; COALESCENCE; LOW ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY;

ZINC OXIDE;

EID: 34547572714     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2746339     Document Type: Article

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