Study of the temperature and stress in nanoscale ductile mode cutting of silicon using molecular dynamics simulation

Journal of Materials Processing Technology

Volumn 192-193, Issue , 2007, Pages 607-612

  Cai, M B ^a   Li, X P ^a   Rahman, M ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Cutting force; Ductile mode cutting; Molecular dynamics; Silicon wafer; Stress; Temperature

Indexed keywords

BRITTLENESS; CRACK PROPAGATION; CUTTING TOOLS; MOLECULAR DYNAMICS; SHEAR STRESS; SILICON; NANOTECHNOLOGY; SILICON WAFERS; STRESSES; TEMPERATURE;

BRITTLE-DUCTILE TRANSITION; CHIP FORMATION MODE; CUTTING EDGE RADIUS; DISLOCATION EMISSION;

CUTTING;

BRITTLE-DUCTILE TRANSITION; CUTTING CHARACTERISTICS; CUTTING FORCES; DUCTILE MODE CUTTING; MOLECULAR DYNAMICS METHODS; MOLECULAR DYNAMICS SIMULATIONS; NANOSCALE DUCTILE MODE; UNDEFORMED CHIP THICKNESS;

EID: 34547534678     PISSN: 09240136     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmatprotec.2007.04.028     Document Type: Article

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