Power transistor near-infrared microthermography using an intensified CCD camera and frame integration

Measurement Science and Technology

Volumn 18, Issue 8, 2007, Pages 2696-2703

  Dhokkar, S ^a   Serio, B ^b   Lagonotte, P ^a   Meyrueis, P ^b  

^a CNRS   (France)

^b UNIVERSITÉ DE STRASBOURG   (France)

Author keywords

MOSFET; Near infrared thermography; Power semiconductors; Radiometric method; Thermal metrology

Indexed keywords

CHARGE COUPLED DEVICES; MICROSCOPES; MOSFET DEVICES; NONDESTRUCTIVE EXAMINATION; TEMPERATURE CONTROL;

PERIODIC MODE; POWER SEMICONDUCTORS; THERMAL BEHAVIOUR; THERMAL METROLOGY; THRESHOLD TEMPERATURE;

THERMOGRAPHY (IMAGING);

CHARGE COUPLED DEVICES; MICROSCOPES; MOSFET DEVICES; NONDESTRUCTIVE EXAMINATION; TEMPERATURE CONTROL; THERMOGRAPHY (IMAGING);

EID: 34547413989     PISSN: 09570233     EISSN: 13616501     Source Type: Journal    
DOI: 10.1088/0957-0233/18/8/047     Document Type: Article

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