Energy band alignment of an In2O3:Mo/Si heterostructure

Semiconductor Science and Technology

Volumn 22, Issue 8, 2007, Pages 900-904

  Zhang, Xi ^a   Zhang, Qun ^a   Lu, Fang ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITANCE MEASUREMENT; CONDUCTIVE FILMS; SILICON COMPOUNDS; SILICON WAFERS; TRANSPARENCY;

BUILT-IN POTENTIAL; CAPACITANCE-VOLTAGE (C-V) MEASUREMENT; REVERSE CURRENT-TEMPERATURE; SCHEMATIC BAND ALIGNMENT;

HETEROJUNCTIONS;

EID: 34547407200     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/8/013     Document Type: Article

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