Numerical analysis of the energy-band diagram of type-II p-GaInAsSb/p-InAs heterojunction and size-quantization levels at the interface

Semiconductor Science and Technology

Volumn 16, Issue 9, 2001, Pages 812-815

  Bazhenov, N L ^a   Zegrya, G G ^a   Mikhailova, M P ^a   Mynbaev, K D ^a   Smirnov, V A ^a   Yakovlev, Y P ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CHARGE CARRIERS; ELECTROLUMINESCENCE; ELECTRONS; NUMERICAL ANALYSIS; POISSON EQUATION; SEMICONDUCTING GALLIUM COMPOUNDS;

BUILT IN CHARGE; QUANTUM LEVEL ENERGIES; QUASI CLASSICAL APPROXIMATION; SIZE-QUANTIZATION LEVEL;

HETEROJUNCTIONS;

EID: 0035444064     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/9/313     Document Type: Article

References (12)

1. The theory of semiconducting junctions