A zero-mask one-time programmable memory array for RFID applications

Proceedings - IEEE International Symposium on Circuits and Systems

Volumn , Issue , 2006, Pages 975-978

  Barsatan, Randy ^a   Man, Tsz Yin ^a   Chan, Mansun ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT SIMULATION; CMOS INTEGRATED CIRCUITS; TRANSISTORS;

ANTIFUSE (AF) DEVICES; MEMORY ARRAY ARCHITECTURE; PROGRAMMING CIRCUITS; RFID APPLICATIONS;

PROM;

EID: 34547375255     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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8. H. Satake and A. Toriumi, "Dielectric Breakdown Mechanism of Thin-Si02 Studied by the Post-Breakdown Resistance Statistics:' ZEEE Trans.Electron Devices, Vol. 41, No. 4, 200, pp. 741-745.