On the excess noise factors and noise parameter equations for RF CMOS

2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07

Volumn , Issue , 2007, Pages 40-43

  Yan, Cui ^a   Guofu, Niu ^a   Ying, Li ^a   Taylor, Stewart S ^b   Qingqing, Liang ^c   Cressler, John D ^d  

^a AUBURN UNIVERSITY   (United States)

^b INTEL CORPORATION   (United States)

^c IBM MICROELECTRONICS   (United States)

^d GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

FET; Noise parameters; Noise representations

Indexed keywords

BIAS VOLTAGE; FIELD EFFECT SEMICONDUCTOR DEVICES; PARAMETER EXTRACTION; SPURIOUS SIGNAL NOISE;

CHANNEL LENGTH; NOISE EQUATIONS; NOISE PARAMETERS; NOISE REPRESENTATIONS;

CMOS INTEGRATED CIRCUITS;

EID: 34547353607     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2007.322764     Document Type: Conference Paper

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