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Volumn , Issue , 2007, Pages 257-260

A low-power current-reuse LNA for ultra-wideband wireless receivers from 3.1 to 10.6 GHz

Author keywords

CMOS; Low noise amplifier; Low power; Ultra wideband

Indexed keywords

BROADBAND AMPLIFIERS; CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUITS; OPTICAL RECEIVERS; SOFTWARE PROTOTYPING; SPURIOUS SIGNAL NOISE;

EID: 34547352804     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2007.322807     Document Type: Conference Paper
Times cited : (20)

References (23)
  • 5
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    • A 0.6-22GHz broadband CMOS distributed amplifier
    • R.-C. Liu, K.-L. Deng, and H. Wang, "A 0.6-22GHz broadband CMOS distributed amplifier;" in IEEE RFIC Symp. Dig., 2003, pp. 103-106.
    • (2003) IEEE RFIC Symp. Dig , pp. 103-106
    • Liu, R.-C.1    Deng, K.-L.2    Wang, H.3
  • 6
    • 33645910081 scopus 로고    scopus 로고
    • Y. Park, C-H Lee, J. D. Cressler, J. Laskar, and A. Joseph, A very low power SiGe LNA for UWB application, in IEEE MTT-S Int. Microwave Symp. Dig., 2005, pp. 1041-1.044.
    • Y. Park, C-H Lee, J. D. Cressler, J. Laskar, and A. Joseph, "A very low power SiGe LNA for UWB application," in IEEE MTT-S Int. Microwave Symp. Dig., 2005, pp. 1041-1.044.
  • 8
    • 10444220164 scopus 로고    scopus 로고
    • A. Bevilacqua, and Ali, M. Niknejad, An Ultrawideband CMOS Low-Noise Amplifier for 3.1-10.6 GHz Wireless Reveivers, in IEEE Journal of Solid-State Circuits, 39, No. 12, 2005, pp. 2259-2268.
    • A. Bevilacqua, and Ali, M. Niknejad, "An Ultrawideband CMOS Low-Noise Amplifier for 3.1-10.6 GHz Wireless Reveivers," in IEEE Journal of Solid-State Circuits, Vol. 39, No. 12, 2005, pp. 2259-2268.
  • 12
    • 4444250838 scopus 로고    scopus 로고
    • Modeling finger number dependence on RF noise to 10 GHz in 0.13 μm node MOSFETs with 80nm gate length
    • M.C. King, Z. M. Lai, C. H. Huang, C. F. Lee, M. W. Ma, C. M. Huang, Y. Chang and A. Chin, "Modeling finger number dependence on RF noise to 10 GHz in 0.13 μm node MOSFETs with 80nm gate length," in IEEE RF IC Symp. Dig., 2004, pp. 171-174.
    • (2004) IEEE RF IC Symp. Dig , pp. 171-174
    • King, M.C.1    Lai, Z.M.2    Huang, C.H.3    Lee, C.F.4    Ma, M.W.5    Huang, C.M.6    Chang, Y.7    Chin, A.8
  • 13
    • 27644575920 scopus 로고    scopus 로고
    • Modeling RF MOSFETs after electrical stress using low-noise microstrip line layout
    • H. L. Kao, A. Chin, J. M. Lai, C. F. Lee, K. C. Chiang and S. P. McAlister, "Modeling RF MOSFETs after electrical stress using low-noise microstrip line layout," in: IEEE RF IC Symp. Dig., 2005, pp. 157-160.
    • (2005) IEEE RF IC Symp. Dig , pp. 157-160
    • Kao, H.L.1    Chin, A.2    Lai, J.M.3    Lee, C.F.4    Chiang, K.C.5    McAlister, S.P.6
  • 23
    • 0033708950 scopus 로고    scopus 로고
    • RF loss and cross talk on extremely high resistivity (10K-1MΩ-cm) Si fabricated by ion implantation
    • Y. H. Wu, A. Chin, K. H. Shih, C. C. Wu, S. C. Pai, C. C. Chi, and C. P. Liao, "RF loss and cross talk on extremely high resistivity (10K-1MΩ-cm) Si fabricated by ion implantation," in IEEE MTT-S Int. Microwave Symp. Dig., 2000, vol. 1, pp. 221-224.
    • (2000) IEEE MTT-S Int. Microwave Symp. Dig , vol.1 , pp. 221-224
    • Wu, Y.H.1    Chin, A.2    Shih, K.H.3    Wu, C.C.4    Pai, S.C.5    Chi, C.C.6    Liao, C.P.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.