Low RF noise and power loss for ion-implanted Si having an improved implantation process

IEEE Electron Device Letters

Volumn 24, Issue 1, 2003, Pages 28-30

  Chan, K T ^a   Chin, Albert ^a   McAlister, S P ^b   Chang, C Y ^a   Liu, J ^c   Chien, S C ^c   Duh, D S ^d   Lin, W J ^d  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^d INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

Author keywords

Loss; Noise; Power; RF; Transmission line

Indexed keywords

ELECTRIC IMPEDANCE; EQUIVALENT CIRCUITS; ION IMPLANTATION; MATHEMATICAL MODELS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; MOSFET DEVICES; SPURIOUS SIGNAL NOISE; SUBSTRATES; TRANSMISSION LINE THEORY; VLSI CIRCUITS;

POWER LOSS; RADIOFREQUENCY NOISE;

SEMICONDUCTING SILICON;

EID: 0037250441     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.807027     Document Type: Letter

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