Formation of hydrogen impurity states in silicon and insulators at low implantation energies

Physical Review Letters

Volumn 98, Issue 22, 2007, Pages

  Prokscha, T ^a   Morenzoni, E ^a   Eshchenko, D G ^a,b   Garifianov, N ^a,c   Gluckler H ^d   Khasanov, R ^a,b   Luetkens, H ^a   Suter, A ^a  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b PHYSIK INSTITUT DER UNIVERSITÄT ZÜRICH   (Switzerland)

^c ZAVOISKY PHYSICAL TECHNICAL INSTITUTE   (Russian Federation)

^d FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATORS; ELECTRIC PROPERTIES; HYDROGEN; IMPURITIES; ION IMPLANTATION; SILICON;

H-IMPURITY STATES; HYDROGENLIKE MUONIUM; IMPLANTATION ENERGY; POSITIVE MUONS;

EQUATIONS OF STATE;

EID: 34547332830     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.98.227401     Document Type: Article

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