|
Volumn 264, Issue 2-3, 1999, Pages 226-231
|
Electron transport to positive centers in GaAs
|
Author keywords
Anomalous muonium; Electron transport; Muonium formation
|
Indexed keywords
ELECTRIC FIELDS;
GALLIUM ARSENIDE;
III-V SEMICONDUCTORS;
IONIZATION;
SEMICONDUCTING GALLIUM;
ALTERNATING ELECTRIC FIELD;
ELECTRIC FIELD INDUCED;
ELECTRON TRANSPORT;
EXCESS ELECTRONS;
MUON SPIN ROTATION/RELAXATION;
MUONIUM;
MUONIUM FORMATION;
SEMI-INSULATING GAAS;
ELECTRON TRANSPORT PROPERTIES;
ARTICLE;
ELECTRIC FIELD;
ELECTRON TRANSPORT;
IONIZATION;
ROTATION;
TECHNIQUE;
|
EID: 0033590002
PISSN: 03759601
EISSN: None
Source Type: Journal
DOI: 10.1016/S0375-9601(99)00810-5 Document Type: Article |
Times cited : (28)
|
References (29)
|