Use of slurry colloidal behavior in modeling of material removal rates for copper CMP

Journal of the Electrochemical Society

Volumn 154, Issue 6, 2007, Pages

  Gopal, Tanuja ^a   Talbot, Jan B ^a,b  

^a UNIVERSITY OF CALIFORNIA SAN DIEGO   (United States)

^b ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MATERIAL REMOVAL RATES; SLURRY CHEMISTRY;

ALUMINA; CHEMICAL MECHANICAL POLISHING; COPPER; SIZE DISTRIBUTION; SLURRIES;

COLLOIDS;

EID: 34547227345     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2718474     Document Type: Article

References (21)

1. T. Gopal, Ph.D. Thesis, University of California, San Diego (2004).
2. T. Gopal and J. B. Talbot, J. Electrochem. Soc., 153, G727 (2006).
3. J. Luo and D. Dornfeld, IEEE Trans. Semicond. Manuf., 14, 112 (2001).
4. J. M. Steigerwald, S. P. Murarka, and R. J. Gutman, Chemical Mechanical Planarization of Microelectronic Materials, John Wiley and Sons, New York (1997).
5. W. T. Tseng and Y. L. Wang, J. Electrochem. Soc., 144, L15, (1997).
6. B. Stine, D. Ouma, D. Direcha, D. Boning, J. Chung, and D. Hetherington, IEEE Trans. Semicond. Manuf., 11, 129 (1998).
7. D. J. Stein, D. Hetherington, and J. L. Cecchi, J. Electrochem. Soc., 146, 1934 (1999).
8. R. J. Gutman, C. L. Borst, B. Lee, D. G. Thakurta, D. J. Duquetter, and W. N. Gill, in Proceedings of the VIMC Conference, 123 (2000).
9. Y. Gotkis and R. Kistler, Abstract 496. The Electrochemical Society Meeting Abstracts. Vol. 2000-4, Phoenix, AZ, Oct 22-27, 2000.
10. M. T. Oliver, Chemical-Mechanical Planarization of Semiconductor Material, Springer-Verlag, Berlin (2004).
11. M. Elimelech, J. Gregory, X. Jia, and R. A. Williams, Particle Deposition and Aggregation, Butterworth-Heinemann, Woburn, MA (1995).
12. F. E. Torres, W. B. Russel, and W. R. Schowalter, J. Colloid Interface Sci., 142, 554 (1991).
13. W. Lortz, MRS Bull., 28, 7 (2003).
14. Y. Hong, D. Eom, and J. Park, in Thin Film Materials, Processes, and Reliability in Microelectronics, G. S. Mathad, M. Yang, M. Englehardt, H. S. Rathore, B. C. Bakes, and, R. L. Opila, Editors, PV 2001-24, p. 126, The Electrochemical Society Proceedings Series, Pennington, NJ (2001).
15. S. Seal, S. C. Kuiry, and B. Heinmen, Thin Solid Films, 423, 243 (2003).
16. S. Asku and F. M. Doyle, J. Electrochem. Soc., 148, B51 (2001).
17. M. T. Wang, M. S. Tsai, and M. C. Chem, Thin Solid Films, 518, 308 (1997).
18. I. P. Kim, N. H. Kim, J. H. Lim, S. Y. Kim, and E. G. Chang, Abstract 912, The Electrochemical Society Meeting Abstracts, Vol. 2003-2, Orlando, FL, Oct 12-16, 2003.
19. H. Hirabayashi, M. Kinoshita, H. Kaneko, N. Hayasaska, M. Huguchiet, K. Mase, and J. Oshima, in Proceedings of the First Chemical Mechanical Planarization for VLSI/ULSI Multilevel Interconnecttion Conference, CMP-MIC, p. 119 (1996).
20. R. Ihnfeldt and J. B. Talbot, J. Electrochem. Soc., 153, G948 (2006).
21. R. Ihnfeldt, M.S. Thesis, University of California, San Diego (2005).