Hole states in artificial molecules formed by vertically coupled Ge/Si quantum dots

JETP Letters

Volumn 85, Issue 9, 2007, Pages 429-433

  Yakimov, A I ^a   Mikhalev, G Yu ^a   Nenashev, A V ^a   Dvurechenskii A V ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 34547220448     PISSN: 00213640     EISSN: 10906487     Source Type: Journal    
DOI: 10.1134/S0021364007090044     Document Type: Article

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