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Volumn 483-485, Issue , 2005, Pages 885-888

Gamma and proton irradiation effects on 4H-SiC depletion-mode trench JFETs

Author keywords

4H SiC; JFET; Radiation effects

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GAMMA RAYS; ION BOMBARDMENT; PROTON IRRADIATION; RADIATION EFFECTS; SILICON CARBIDE;

EID: 34547187423     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.885     Document Type: Conference Paper
Times cited : (13)

References (9)
  • 5
    • 35148895150 scopus 로고    scopus 로고
    • Z. Luo, A.C. Ahyi, T. Chen, A. Sutton, B. Haugerud, J.D. Cressler, D.C. Sheridan, J.R. Williams, P.W. Marshall and R.A. Reed: Submitted to the IEEE Nuclear and Space Radiation Effects Conf., Atlanta, GA (July 2004)
    • Z. Luo, A.C. Ahyi, T. Chen, A. Sutton, B. Haugerud, J.D. Cressler, D.C. Sheridan, J.R. Williams, P.W. Marshall and R.A. Reed: Submitted to the IEEE Nuclear and Space Radiation Effects Conf., Atlanta, GA (July 2004)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.