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Volumn 483-485, Issue , 2005, Pages 885-888
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Gamma and proton irradiation effects on 4H-SiC depletion-mode trench JFETs
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Author keywords
4H SiC; JFET; Radiation effects
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Indexed keywords
CURRENT VOLTAGE CHARACTERISTICS;
GAMMA RAYS;
ION BOMBARDMENT;
PROTON IRRADIATION;
RADIATION EFFECTS;
SILICON CARBIDE;
BLOCKING MODES;
CURRENT RATING;
PRE-IRRADIATION PERFORMANCE;
PROTON IRRADIATION EFFECTS;
JUNCTION GATE FIELD EFFECT TRANSISTORS;
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EID: 34547187423
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028/0-87849-963-6.885 Document Type: Conference Paper |
Times cited : (13)
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References (9)
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