Analysis of recovery process of neutron-irradiation-induced defects in α-SiC by isothermal annealing up to 1400 °C

Journal of Nuclear Materials

Volumn 367-370 A, Issue SPEC. ISS., 2007, Pages 692-697

  Yamazaki, Saishun ^a   Yamaya, Kousuke ^a   Imai, Masamitsu ^a   Yano, Toyohiko ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

IRRADIATION TEMPERATURE; ISOTHERMAL ANNEALING TEMPERATURE; LENGTH RECOVERY; MACROSCOPIC LENGTH;

ACTIVATION ENERGY; ISOTHERMAL ANNEALING; NUCLEAR FUEL REPROCESSING; SILICON CARBIDE;

NEUTRON IRRADIATION;

EID: 34447577747     PISSN: 00223115     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnucmat.2007.03.095     Document Type: Article

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