Surface characterization of silicon carbide following shallow implantation of platinum ions

Surface and Coatings Technology

Volumn 201, Issue 19-20 SPEC. ISS., 2007, Pages 8339-8342

  Muntele, C I ^a   Ichou, R ^a   Muntele, I C ^a   Sarkisov, S ^a   Ila, D ^a  

^a ALABAMA A AND M UNIVERSITY   (United States)

Author keywords

High temperature electronics; Hydrogen sensing; Ion implantation; Silicon carbide

Indexed keywords

HYDROGEN SENSING; STRUCTURAL CHANGE;

CHARACTERIZATION; CHEMICAL SENSORS; ELECTRIC CONTACTS; ENERGY GAP; ION IMPLANTATION; MICROELECTRONICS; PLATINUM;

SILICON CARBIDE;

CHARACTERIZATION; CHEMICAL SENSORS; ELECTRIC CONTACTS; ENERGY GAP; ION IMPLANTATION; MICROELECTRONICS; PLATINUM; SILICON CARBIDE;

EID: 34447538026     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2006.01.082     Document Type: Article

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