Verification of the plan dosimetry for high dose rate brachytherapy using metal-oxide-semiconductor field effect transistor detectors

Medical Physics

Volumn 34, Issue 6, 2007, Pages 2007-2013

  Qi, Zhen Yu ^a,b   Deng, Xiao Wu ^a,b   Huang, Shao Min ^a   Lu, Jie ^a   Lerch, Michael ^b   Cutajar, Dean ^b   Rosenfeld, Anatoly ^b  

^a SUN YAT SEN UNIVERSITY CANCER CENTER   (China)

^b UNIVERSITY OF WOLLONGONG   (Australia)

Author keywords

Brachytherapy; HDR; MOSFET; Quality assurance; Treatment verification

Indexed keywords

COMPUTERIZED TOMOGRAPHY; DIELECTRIC DEVICES; DOSIMETRY; ELECTRIC BREAKDOWN; IONIZATION OF LIQUIDS; METALLIC COMPOUNDS; METALS; MOS DEVICES; ONCOLOGY; OXIDE SEMICONDUCTORS; PHANTOMS; QUALITY ASSURANCE; RADIATION DECONTAMINATION; RADIOTHERAPY; THRESHOLD VOLTAGE; TRANSISTORS;

BRACHYTHERAPY; HIGH-DOSE RATE BRACHYTHERAPY; KEY CHARACTERISTICS; MOS-FET; PERCENTAGE DEVIATION; PHANTOM MEASUREMENTS; TREATMENT PLANNING SYSTEMS; TREATMENT VERIFICATION;

MOSFET DEVICES;

METAL OXIDE;

ARTICLE; BRACHYTHERAPY; COMPUTER ASSISTED TOMOGRAPHY; DOSE CALCULATION; DOSIMETRY; IONIZATION; PRIORITY JOURNAL; QUALITY CONTROL; RADIATION DOSE; SEMICONDUCTOR; TREATMENT PLANNING;

EID: 34447301820     PISSN: 00942405     EISSN: None     Source Type: Journal    
DOI: 10.1118/1.2736288     Document Type: Article

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