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The VllSta 810 300mm medium current implanter
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Kyoto, Japan, J. Matsuo, G. Takaoka, and I. Yamada, eds., Piscataway, NJ: IEEE
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A. Renau, D. Hacker, "The VllSta 810 300mm Medium Current Implanter," 1998 International Conference on Ion Implantation Technology Proceedings, Kyoto, Japan, J. Matsuo, G. Takaoka, and I. Yamada, eds., Piscataway, NJ:IEEE 1999, pp. 158-161.
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Renau, A.1
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The beam line architecture of the VHSta 810 medium current implanter
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Kyoto, Japan, J. Matsuo, G. Takaoka, and I. Yamada, eds., Piscataway, NJ: IEEE
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A. Renau, "The Beam Line Architecture of the VHSta 810 Medium Current Implanter," 1998 International Conference on Ion Implantation Technology Proceedings, Kyoto, Japan, J. Matsuo, G. Takaoka, and I. Yamada, eds., Piscataway, NJ:IEEE 1999, pp. 162-165.
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Kyoto, Japan, J. Matsuo, G. Takaoka, and I. Yamada, eds., Piscataway, NJ: IEEE
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D. L. Smatlak, J. Scheuer, A. Renau, A. Cucchetti, J. Olson, "Beam Purity Control in the VHSta 810 Implanter," 1998 International Conference on Ion Implantation Technology Proceedings, Kyoto, Japan, J. Matsuo, G. Takaoka, and I. Yamada, eds., Piscataway, NJ:IEEE 1999,pp. 166-168.
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Scanned beam uniformity control in the VIISta 810 ion implanter
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Defect density reduction on the VilSta 810 implanter
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Kyoto, Japan, J. Matsuo, G. Takaoka, and J. Yamada, eds., Piscataway, NJ: IEEE
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J. T. Scheuer, A. Renau, D. L. Smatlak, J. C. Olson, A. Cucchetti, "Defect Density Reduction on the VilSta 810 Implanter," 1998 International Conference on Ion Implantation Technology Proceedings, Kyoto, Japan, J. Matsuo, G. Takaoka, and J. Yamada, eds., Piscataway, NJ:IEEE 1999, pp. 173-175.
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