Reverse bias capacitance-voltage characteristics of Au/n-GaAs Schottky diodes under hydrostatic pressure

International Journal of Electronics

Volumn 87, Issue 10, 2000, Pages 1171-1176

  Cankaya G ^a   Ucar N ^a   Turut A ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CAPACITORS; ELECTRIC POTENTIAL; HYDROSTATIC PRESSURE; IONIZATION; LIQUID PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE;

REVERSE BIAS CAPACITANCE;

SCHOTTKY BARRIER DIODES;

EID: 0034309431     PISSN: 00207217     EISSN: None     Source Type: Journal    
DOI: 10.1080/002072100415611     Document Type: Article

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