Thermal stability of GaN investigated by Raman scattering

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue SUPPL. 1, 1999, Pages

  Kuball, M ^a   Demangeot, F ^b   Frandon, J ^b   Renucci, M A ^b   Grandjean, N ^c   Briot, O ^d  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b UNIVERSITÉ PAUL SABATIER   (France)

^c CRHEA CNRS   (France)

^d CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHONONS; PHOTOLUMINESCENCE; RAMAN SCATTERING; SAPPHIRE; STOICHIOMETRY; SURFACE CHEMISTRY; SURFACES; THERMODYNAMIC STABILITY;

ALGAN; GAN; RAMAN MICROSCOPE SYSTEMS; RAMAN PEAKS;

GALLIUM NITRIDE;

EID: 3442891575     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300003203     Document Type: Conference Paper

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