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Volumn 4, Issue SUPPL. 1, 1999, Pages

Si delta doped GaN grown by low-pressure metalorganic chemical vapor deposition

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; DESORPTION; DOPING (ADDITIVES); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PYROLYSIS;

CAPACITANCE VOLTAGE MEASUREMENT; DELTA DOPING; THERMAL DECOMPOSITION EFFICIENCY;

GALLIUM NITRIDE;

EID: 3442875947 PISSN: 10925783 EISSN: None Source Type: Journal
DOI: 10.1557/s1092578300002635 Document Type: Conference Paper

Times cited : (4)

References (13)

1
- 0030658296
- P. Kozodoy, A. Abare, R. K. Sink, M. Mack, S. Keller, S. P. DenBaars, U. K. Mishra and D. Steigerwald: Mat. Res. Soc. Symp. Proc. 468, 481 (1997).
- (1997) Mat. Res. Soc. Symp. Proc. , vol.468 , pp. 481
- Kozodoy, P.¹ Abare, A.² Sink, R.K.³ Mack, M.⁴ Keller, S.⁵ DenBaars, S.P.⁶ Mishra, U.K.⁷ Steigerwald, D.⁸

2
- 0029389357
- S. Nakamura, M. Senoh, N. Isawa, S. Nagahama, T. Yamada and T. Mukai: Jpn. J. Appl. Phys. 34, L1332 (1995).
- (1995) Jpn. J. Appl. Phys. , vol.34
- Nakamura, S.¹ Senoh, M.² Isawa, N.³ Nagahama, S.⁴ Yamada, T.⁵ Mukai, T.⁶

3
- 0032025340
- S. Nakamura, M. Senoh, S. Nagahama, N. Isawa, T. Yamada, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano and K. Chocho: Jpn. J. Appl. Phys. 37, L309 (1998).
- (1998) Jpn. J. Appl. Phys. , vol.37
- Nakamura, S.¹ Senoh, M.² Nagahama, S.³ Isawa, N.⁴ Yamada, T.⁵ Matsushita, T.⁶ Kiyoku, H.⁷ Sugimoto, Y.⁸ Kozaki, T.⁹ Umemoto, H.¹⁰ Sano, M.¹¹ Chocho, K.¹²

4
- 0001750129
- J. Burm, W. J. Schaff, L. F. Eastman, H. Amano and I. Akasaki: Appl. Phys. Lett. 68, 2849 (1996).
- (1996) Appl. Phys. Lett. , vol.68 , pp. 2849
- Burm, J.¹ Schaff, W.J.² Eastman, L.F.³ Amano, H.⁴ Akasaki, I.⁵

5
- 0030570708
- Q. Chen, M. A. Khan, J. W. Yang, C. J. Sun, M. S. Shur and H. Park: J. Appl. Phys. 69, 794 (1996).
- (1996) J. Appl. Phys. , vol.69 , pp. 794
- Chen, Q.¹ Khan, M.A.² Yang, J.W.³ Sun, C.J.⁴ Shur, M.S.⁵ Park, H.⁶

6
- 0026852923
- S. Nakajima, K. Otobe and N. Shiga: IEEE Trans. Electron. Devices 39, 771 (1992).
- (1992) IEEE Trans. Electron. Devices , vol.39 , pp. 771
- Nakajima, S.¹ Otobe, K.² Shiga, N.³

7
- 84955022530
- E. F. Schubert: J. Vac. Sci. Technol. A 8, 2980 (1990).
- (1990) J. Vac. Sci. Technol. A , vol.8 , pp. 2980
- Schubert, E.F.¹

8
- 0031235877
- G. Li and C. Jagadish: Solid State Electron. 41 (1997) 1207.
- (1997) Solid State Electron. , vol.41 , pp. 1207
- Li, G.¹ Jagadish, C.²

9
- 3442882596
- J.-H. Kim, D. H. Lim, G. M. Yang, Y. G. Shin, K. Y. Lim and H. J. Lee: Appl. Phys. Lett. 69, 1870 (1996).
- (1996) Appl. Phys. Lett. , vol.69 , pp. 1870
- Kim, J.-H.¹ Lim, D.H.² Yang, G.M.³ Shin, Y.G.⁴ Lim, K.Y.⁵ Lee, H.J.⁶

10
- 0037516470
- O. Buchinsky, M. Blumin and D. Fekete: Appl. Phys. Lett. 72, 1484 (1998).
- (1998) Appl. Phys. Lett. , vol.72 , pp. 1484
- Buchinsky, O.¹ Blumin, M.² Fekete, D.³

11
- 0042247367
- H. M. Shieh, W. C. Hsu and C. L. Wu: Appl. Phys. Lett. 63, 509 (1993).
- (1993) Appl. Phys. Lett. , vol.63 , pp. 509
- Shieh, H.M.¹ Hsu, W.C.² Wu, C.L.³

12
- 36549101512
- E. F. Schubert, J. B. Stark, B. Ullrich and J. E. Cunningham: Appl. Phys. Lett. 52, 1508 (1988).
- (1988) Appl. Phys. Lett. , vol.52 , pp. 1508
- Schubert, E.F.¹ Stark, J.B.² Ullrich, B.³ Cunningham, J.E.⁴

13
- 0029373547
- G. Li and C. Jagadish: Mater. Sci. Eng. B 33, 182 (1995).
- (1995) Mater. Sci. Eng. B , vol.33 , pp. 182
- Li, G.¹ Jagadish, C.²

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