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Volumn 3, Issue 1-3, 1998, Pages 79-88

Metal-insulator transition in two dimensions

Author keywords

Metal insulator transition; Two dimensional electron gas

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTANCE; ELECTRON GAS; ELECTRON TRANSITIONS; MOS DEVICES; SEMICONDUCTING SILICON; TWO DIMENSIONAL;

EID: 0032179745     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(98)00221-5     Document Type: Article
Times cited : (43)

References (55)
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    • note
    • 0 for Dyakonov-Perel spin-relaxation mechanism, which seems to be dominant in Si-MOS structures with strong gradient of the potential at the interface.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.