Effects of Mn doping on the polarization and leakage current properties in Bi4Ti3O12 single crystals

Journal of the European Ceramic Society

Volumn 27, Issue 13-15, 2007, Pages 4081-4084

  Noguchi, Yuji ^a   Yamamoto, Katsuya ^a   Kitanaka, Yuuki ^a   Miyayama, Masaru ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Defects; Ferroelectric properties; Perovskite; X ray methods

Indexed keywords

COERCIVE FORCE; CURRENT DENSITY; LEAKAGE CURRENTS; MANGANESE; PARAMAGNETIC RESONANCE; PEROVSKITE; POLARIZATION; REMANENCE; SUBSTITUTION REACTIONS;

SELF-FLUX METHOD;

SINGLE CRYSTALS;

COERCIVE FORCE; CURRENT DENSITY; LEAKAGE CURRENTS; MANGANESE; PARAMAGNETIC RESONANCE; PEROVSKITE; POLARIZATION; REMANENCE; SINGLE CRYSTALS; SUBSTITUTION REACTIONS;

EID: 34347343915     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2007.02.104     Document Type: Article

References (21)

1. 12 single crystals. J. Appl. Phys. 39 5 (1968) 2268-2274
2. 12 thin-films by sol-gel technique. Appl. Phys. Lett. 59 19 (1991) 2389-2390
3. Wu S.Y., Francombe M.H., and Takei W.J. Domain switching effects in epitaxial-films of ferroelectric bismuth titanate. Thin Solid Films 36 2 (1976) 509-512
4. Wu S.Y., Takei W.J., and Francombe M.H. Optical switching characteristics of epitaxial bismuth titanate films for matrix-addressed displays. Ferroelectrics 10 1-4 (1976) 209-213
5. 12 thin films on the low-temperature deposition. Appl. Phys. Lett. 80 1 (2002) 100-102
6. 12 thin films. Adv. Mater. 17 4 (2005) 491-494
7. Takenaka T., and Sakata K. Electrical-properties of grain-oriented ferroelectric ceramics in some lanthanum modified layer-structure oxides. Ferroelectrics 38 1-4 (1981) 769-772
8. Park B.H., Kang B.S., Bu S.D., Noh T.W., Lee J., and Jo W. Lanthanum-substituted bismuth titanate for use in non-volatile memories. Nature 401 6754 (1999) 682-684
9. 12. J. Solid State Chem. 177 10 (2004) 3660-3665
10. 12 ferroelectric single crystals. Jpn. J. Appl. Phys. 44 16-19 (2005) L570-L572
11. 12 single crystals. Jpn. J. Appl. Phys. 44 9B (2005) 6998-7002
12. 9 ceramics modified by Ce and Pr. J. Eur. Ceram. Soc. 25 12 (2005) 2477-2482
13. 12/Pt capacitors: possible influence of defect structure on fatigue properties. Phys. Rev. B 68 1 (2003) 014102
14. Jimenez B., Jimenez R., Castro A., Millan P., and Pardo L. Dielectric and mechanoelastic relaxations due to point defects in layered bismuth titanate ceramics. J. Phys. Conds. Matter 13 33 (2001) 7315-7326
15. Noguchi Y., Miwa I., Goshima Y., and Miyayama M. Defect control for large remanent polarization in bismuth titanate ferroelectrics doping effect of higher-valent cations. Jpn. J. Appl. Phys. 39 12B (2000) L1259-L1262
16. 12 thin films. Mod. Phys. Lett. B 13 26 (1999) 933-945
17. 12 single crystal. Jpn. J. Appl. Phys. 41 11B (2002) 7053-7056
18. Izumi F., and Ikeda T. Mater. Sci. Forum 321-324 (2000) 198-203
19. 2+ distribution in Cu-modified ZnS on the concentration quenching of electroluminescence brightness. Appl. Phys. Lett. 66 4 (1995) 424-426
20. 3 ceramics by means of ESR. Jpn. J. Appl. Phys. 37 9B (1998) 5237-5240
21. 3 ceramics doped with small amounts of elements. Jpn. J. Appl. Phys. 43 9B (2004) 6706-6710