Retention loss characteristics of localized charge-trapping devices

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2004, Pages 527-530

  Lusky, Eli ^a   Shacham Diamand, Yossi ^b   Shappir, Assaf ^a   Bloom, Ilan ^a   Cohen, Guy ^a   Eitan, Boaz ^a  

^a Saifun Semiconductors Ltd   (Israel)

^b TEL AVIV UNIVERSITY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRIC CHARGE; ELECTRIC FIELD EFFECTS; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; THRESHOLD VOLTAGE;

CHARGE-TRAPPING DEVICES; CYCLING THEORY; GATE INDUCED DRAIN LEAKAGE (GIDL) MEASUREMENTS; NROM DEVICES;

ROM;

EID: 3042656424     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. B. Eitan et al., EDL-21 (11), pp.543-545, 2000.
2. E. Lusky et al., EDL-23(9) pp. 556-558, 2002.
3. W. Tsai et al., IEDM pp. 556-558, 2001.
4. E. Lusky et al., EDL-22(11) pp. 556-558, 2001.
5. E. Lusky et al., TED-51(3)pp. 444-451, 2004
6. A. Shappir et al., Micro. Elec. Eng., to be published (available online, March 2004).
7. M. Janai, IRPS Proc., pp. 502-505, 2003.