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Volumn , Issue , 2005, Pages 157-160

On-chip high-voltage charge pump circuit in standard CMOS processes with polysilicon diodes

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIODES; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; POLYSILICON;

EID: 34250741373     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASSCC.2005.251689     Document Type: Conference Paper
Times cited : (9)

References (11)
  • 2
    • 0036773123 scopus 로고    scopus 로고
    • High-voltage transistor scaling circuit techniques for high-density negative-gate channel-erasing NOR flash memory
    • Oct
    • T. Tanzawa, Y. Takano, K. Watanabe, and S. Atsumi, "High-voltage transistor scaling circuit techniques for high-density negative-gate channel-erasing NOR flash memory," IEEE J. Solid-State Circuits, vol. 37, pp. 1318-1325, Oct. 2002.
    • (2002) IEEE J. Solid-State Circuits , vol.37 , pp. 1318-1325
    • Tanzawa, T.1    Takano, Y.2    Watanabe, K.3    Atsumi, S.4
  • 3
    • 0343877279 scopus 로고    scopus 로고
    • Low-power BiCMOS op-amp with integrated current-mode charge pump
    • Jul
    • R. S. Pierre, "Low-power BiCMOS op-amp with integrated current-mode charge pump," IEEE J. Solid-State Circuit's, vol. 35, pp. 1046-1050, Jul. 2000.
    • (2000) IEEE J. Solid-State Circuit's , vol.35 , pp. 1046-1050
    • Pierre, R.S.1
  • 6
    • 0016961262 scopus 로고
    • On-chip high-voltage generation in MNOS integrated circuits using an improved voltage multiplier technique
    • Jun
    • J. F. Dickson, "On-chip high-voltage generation in MNOS integrated circuits using an improved voltage multiplier technique," IEEE J. Solid-State Circuits, vol. 11, pp. 374-378, Jun. 1976.
    • (1976) IEEE J. Solid-State Circuits , vol.11 , pp. 374-378
    • Dickson, J.F.1
  • 8
    • 0001050518 scopus 로고    scopus 로고
    • MOS charge pump for low-voltage operation
    • Apr
    • J.-T. Wu and K.-L. Chang, "MOS charge pump for low-voltage operation," IEEE J. Solid-State Circuits, vol. 33, pp. 592-597, Apr. 1998.
    • (1998) IEEE J. Solid-State Circuits , vol.33 , pp. 592-597
    • Wu, J.-T.1    Chang, K.-L.2
  • 9
    • 0034247158 scopus 로고    scopus 로고
    • A new charge pump without degradation in threshold voltage due to body effect
    • Apr
    • J. Shin, I.-Y. Chung, Y. J. Park, and H. S. Min, "A new charge pump without degradation in threshold voltage due to body effect," IEEE J. Solid-State Circuits, vol. 35, pp. 1227-1230, Apr. 2000.
    • (2000) IEEE J. Solid-State Circuits , vol.35 , pp. 1227-1230
    • Shin, J.1    Chung, I.-Y.2    Park, Y.J.3    Min, H.S.4
  • 10
    • 4344713230 scopus 로고    scopus 로고
    • A new charge pump circuit dealing with gate-oxide reliability issue in low-voltage processes
    • M.-D. Ker, S.-L. Chen, and C.-S. Tsai, "A new charge pump circuit dealing with gate-oxide reliability issue in low-voltage processes," in Proc. IEEE Int. Symp. Circuits Syst., 2004, vol. I, pp. 321-324.
    • (2004) Proc. IEEE Int. Symp. Circuits Syst , vol.1 , pp. 321-324
    • Ker, M.-D.1    Chen, S.-L.2    Tsai, C.-S.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.