Linearity improvement of multi-watts 24-28V InGaP/GaAs HBT by low frequency low source impedance matching

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2004, Pages 541-544

  Wang, N L ^a   Ma, W ^a   Chen, X ^a   Sun, X ^a   Chau, H F ^a   Dunnrowicz, C ^a   Chen, Y ^a   Lin, B ^a   Lo, I L ^b   Huang, C H ^b   Yang, M H T ^b  

^a EiC Corp   (United States)

^b Visual Photonics Epitaxy Co Ltd   (Taiwan)

Author keywords

Heterojunction bipolar transistor; Interchannel interference; Power bipolar amplifiers

Indexed keywords

INTERCHANNEL INTERFERENCE; POWER BIPOLAR AMPLIFIERS; SCHOTTKY DIODES; WCDMA;

CIRCUIT THEORY; CODE DIVISION MULTIPLE ACCESS; DIODES; ELECTRIC IMPEDANCE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; HETEROJUNCTION BIPOLAR TRANSISTORS; MATHEMATICAL MODELS; NATURAL FREQUENCIES; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL DISTORTION; SIGNAL INTERFERENCE;

POWER AMPLIFIERS;

EID: 4444273960     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. J.H.K. Vuolevi, T. Rahkonen, J.P.A. Manninen, "Measurement Technique for Characterizing memory Effects in RF Power Amplifier," IEEE Trans. MIT, Vol. 49, No.8, pp. 1383-1389, Aug. 2001.
2. P.Kurpas et al, "High-voltage GaAs Power-HBTs for Base-Station Amplifiers," 2001 IEEE MTT-S Int. Microwave Symp. Dig., pp. 633-636, June 2001.
3. N.L. Wang, et al, "High Efficiency 28V Class AB InGaP/GaAs HBT MMIC Amplifier with Integrated Bias Circuit," IEEE Dig.MTT, IMS2003, pp 707-710, June, 2003
4. A. Inoue, et al, "Direct measurement of the Maximum Operating Region in GaAs HBTs for RF Power Amplifiers", IEEE MTT-S Int. Microwave Symp. Dig., vol. 3, pp.1687-1690, May 2001.