Physics of solid-phase epitaxy of hydrogenated amorphous silicon for thin film Si photovoltaics

Materials Research Society Symposium Proceedings

Volumn 910, Issue , 2007, Pages 365-370

  Stradins, Paul ^a   Yan, Yanfa ^a   Reedy, Robert ^a   Young, David L ^a   Teplin, Charles W ^a   Iwaniczko, Eugene ^a   Xu, Yueqin ^a   Jones, Kim ^a   Teeter, Glenn ^a   Mahan, A Harv ^a   Branz, Howard M ^a   Wang, Qi ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INDIFFUSION; SOLID PHASE EPITAXY; SOLID PHASE EPITAXY VELOCITY; SOLID STATE CRYSTALLIZATION;

CRYSTALLIZATION; DEHYDROGENATION; EPITAXIAL GROWTH; FILM THICKNESS; ION IMPLANTATION; PHOTOVOLTAIC CELLS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS SILICON;

EID: 34249950535     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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