Fast deposition of highly crystallized microcrystalline Si films utilizing a high-density microwave plasma source for Si thin film solar cells

Materials Research Society Symposium Proceedings

Volumn 910, Issue , 2007, Pages 309-314

  Jia, Haijun ^a,b   Shirai, Hajime ^b   Kondo, Michio ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; DEPOSITION RATES; FILM GROWTH; ION BOMBARDMENT; SOLAR CELLS; THIN FILMS;

ATOMIC HYDROGEN; FILM MASS DENSITY; MICROWAVE PLASMA SOURCES; RAMAN CRYSTALLINITY;

MICROCRYSTALLINE SILICON;

EID: 34249935572     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. T. Matsui, M. Kondo, and A. Matsuda, Jpn. J. Appl. Phys. 42, L901 (2003).
2. H. Shirai, Y. Sakuma and H. Ueyama, Thin Solid Films 345, 7 (1999).
3. S. Nunomura, H. Akatsuda and M. Kondo, ICRP-6/SPP-23, Sendai, Japan, 2006, P-3B-36
4. H. Jia, J. K. Saha and H. Shirai, Jpn. J. App. Phys. 45, 666 (2006).