Study of crystal damage by ion implantation using micro RBS/channeling

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 260, Issue 1, 2007, Pages 276-280

  Grambole, D ^a   Herrmann, F ^a   Heera, V ^a   Meijer, J ^b  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

Amorphisation; Critical temperature; Experimental setup; Ion current density; Ion implantation; Micro RBS channeling; Nuclear microprobe; Radiation damage; Si ions; Silicon

Indexed keywords

AMORPHIZATION; ARRHENIUS PLOTS; CRYSTAL DEFECTS; CURRENT DENSITY; ION IMPLANTATION; RADIATION DAMAGE; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

ARRHENIUS LAW; CRITICAL TEMPERATURE; CRYSTAL DAMAGE; ION CURRENT DENSITY; MICROBEAM IMPLANTATION;

MICROCRYSTALLINE SILICON;

EID: 34249912619     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.02.034     Document Type: Article

References (12)

1. Goldberg R.D., Elliman R.G., and Williams J.S. Nucl. Instr. and Meth. B 80/81 (1993) 569
2. Goldberg R.D., Williams J.S., and Elliman R.G. Nucl. Instr. and Meth. B 106 (1995) 242
3. Schultz P.J., Jagadish C., Ridgway M.C., Elliman R.G., and Williams J.S. Phys. Rev. B 44 (1991) 9118
4. Zhong Y., Bailat C., Averback R.S., Ghose S.K., and Robinson I.K. J. Appl. Phys. 96 (2004) 1328
5. Herrmann F., and Grambole D. Nucl. Instr. and Meth. B 104 (1995) 26
6. Melngailis J. J. Vac. Sci. Technol. B 5 (1987) 469
7. Pelaz L., Marqués L.A., and Barbolla J. J. Appl. Phys. B 96 (2004) 5947
8. Wang S.X., Wang L.M., and Ewing R.C. Phys. Rev. B 63 (2000) 024105
9. Weber W.J. Nucl. Instr. and Meth. B 166-167 (2000) 98
10. Heera V., Kögler R., Skorupa W., and Grötzschel R. Nucl. Instr. and Meth. B 80/81 (1993) 538
11. Heera V., Henkel T., Kögler R., and Skorupa W. Phys. Rev. B 52 (1995) 15776
12. Posselt M., Bischoff L., Grambole D., and Herrmann F. Appl. Phys. Lett. 89 (2006) 151918