Stoichiometry investigations of interlayer of GaAs/AlAs heterostructures

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 260, Issue 1, 2007, Pages 314-316

  Meinecke, Ch ^a   Vogt, J ^a   Bauer, J ^a   Gottschalch, V ^a   Butz, T ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

PIXE; RBS; III V semiconductors; Microstructures

Indexed keywords

CRYSTAL IMPURITIES; GROWTH RATE; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; STOICHIOMETRY;

ALUMINIUM ARSENIDE; BEAM SPOT SIZE; INTERLAYERS;

HETEROJUNCTIONS;

EID: 34249901250     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.02.039     Document Type: Article

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