Ion beam induced charge (IBIC) studies of silicon germanium heterojunction bipolar transistors (HBTs)

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 260, Issue 1, 2007, Pages 264-269

  Vizkelethy, G ^a   Reed, R A ^b   Marshall, P W ^c   Pellish, J A ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b VANDERBILT UNIVERSITY   (United States)

^c Brookneal   (United States)

Author keywords

IBIC; Radiation effects; SiGe; Single event upset; TRIBIC

Indexed keywords

ELECTRIC CHARGE; ION BEAMS; NUCLEAR INSTRUMENTATION; RADIATION EFFECTS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

COLLECTORS; EMITTERS; ION BEAM INDUCED CHARGE (IBIC); SPACE COMMUNICATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 34249892787     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.02.032     Document Type: Article

References (7)

1. Cressler J.D., and Niu G. Silicon-Germanium Heterojunction Bipolar Transistors (2003), Artech House, Boston
2. Marshall P.W., Carts M.A., Campbell A., McMorrow D., Buchner S., Stewart R., Randall B., Gilbert B., and Reed R.A. IEEE Trans. Nucl. Sci. 47 (2000) 2669
3. R.A. Reed, P.W. Marshall, H. Aispan, C.J. Marshall, H.S. Kim, J.D. Cressler, G. Niu, K.A. LaBel, in: Proceedings of the IEEE Nuclear and Space radiation Effect Conference of Data Workshop, 2001, p. 172.
4. Niu G., Cressler J.D., Shoga M., Jobe K., Chu P., David D.L., and Harame L. IEEE Trans. Nucl. Sci. 47 (2000) 2683
5. Gunn J.B. Solid-State Electron. 7 (1964) 739
6. Pellish J.A., Reed R.A., et al. IEEE Trans. Nucl. Sci. 53 (2006) 3298
7. E.J. Montes, R.A. Reed, J.A. Pellish, M.L. Alles, R.D. Schrimpf, R.A. Weller, M. Varadharajaperumal,, G. Niu, A.K. Sutton, R. Diestelhorst, G.Espinel, R. Krithivasan, J.P. Comeau, J.D. Cressler, P.W. Marshall, G. Vizkelethy, IEEE Trans. Nucl. Sci., submitted for publication.