Characterization of very low defect-density free-standing GaN substrate grown by hydride-vapor-phase-epitaxy

Materials Research Society Symposium Proceedings

Volumn 680, Issue , 2001, Pages 14-19

  Visconti, P ^a,b,c   Reshchikov, M A ^a   Jones, K M ^a   Yun, F ^a   Cingolani, R ^a,c   Morkoc H ^a   Jasinski, J ^d   Swider, W ^d   Liliental Weber, Z ^d   Park, S S ^e   Lee, K Y ^e  

^a Virginia Commonwealth University   (United States)

^b CNR   (Italy)

^c INFM   (Italy)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^e Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRIC PROPERTIES; FILM GROWTH; OPTICAL PROPERTIES; STRUCTURAL PROPERTIES; VAPOR PHASE EPITAXY;

CHEMICAL ETCHING; EXCITONIC STRUCTURE; HYDRIDE VAPOR PHASE EPITAXY (HVPE); SURFACE DAMAGE;

GALLIUM NITRIDE;

EID: 34249875965     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-680-e2.3     Document Type: Conference Paper

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