Preparation of InN and InN-based heterostructures by molecular beam epitaxy

Materials Research Society Symposium Proceedings

Volumn 680, Issue , 2001, Pages 37-42

  Lu, Hai ^a   Schaff, William J ^a   Hwang, Jeonghyun ^a   Eastman, Lester F ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CARRIER CONCENTRATION; ELECTRON MOBILITY; HETEROJUNCTIONS; MICROELECTRONICS; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; SURFACE MORPHOLOGY; X RAY DIFFRACTION;

CAPACITANCE VOLTAGE MEASUREMENTS; MIGRATION ENHANCED EPITAXY;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 34249863594     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-680-e3.2     Document Type: Conference Paper

References (6)

1. S. Strite and H. Morkoc, J. Vac, Sci. & Technol. B 10, 1237 (1992).
2. S. K. O'Leary, B. E. Foutz, M. S. Shur and L. F. Eastman, J. Appl. Phys. 83, 826 (1998).
3. E. Bellotti, B. K. Doshi, K. F. Brennan, J. D. Albrecht, P. P. Ruden, J. Appl. Phys. 85, 916 (1999).
4. B. E. Foutz, S. K. O'Leary, M. S. Shur and L. F. Eastman, J. Appl. Phys. 85, 7727 (1999).
5. T. Tsuchiya, M. Ohnishi, A. Wakahara, A. Yoshida, J. Crystal Growth 220, 191 (2000).
6. H. Lu, W. J. Schaff, J. Hwang, H. Wu, W. Yeo, A. Pharkya, and L. F. Eastman, Appl. Phys. Lett. 77, 2548 (2000).