Current-carrying capacity of double-wall carbon nanotubes

Nanotechnology

Volumn 18, Issue 23, 2007, Pages

  Moon, Sunkyung ^a,b   Song, Woon ^a   Kim, Nam ^a   Sung Lee, Joon ^a   Na, Pil Sun ^a   Lee, Soon Gul ^b   Park, Jongwan ^c   Jung, Myung Hwa ^d   Lee, Hyun Woo ^e   Kang, Kicheon ^f   Lee, Cheol Jin ^b   Kim, Jinhee ^a  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Korea University   (South Korea)

^c National Nano Fab Center (NNFC)   (South Korea)

^d Korea Basic Science Institute (KBSI)   (South Korea)

^e Pohang University of Science and Technology (POSTECH)   (South Korea)

^f Chonnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRONIC STRUCTURE;

DOUBLE WALL CARBON NANOTUBES (DWNT);

MULTIWALLED CARBON NANOTUBES (MWCN);

DOUBLE WALLED NANOTUBE;

ARTICLE; ATOMIC FORCE MICROSCOPY; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENT; ELECTRIC POTENTIAL; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 34249038037     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/23/235201     Document Type: Article

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