High-temperature photoluminescence spectroscopy in p-type SiC

Semiconductor Science and Technology

Volumn 19, Issue 7, 2004, Pages 833-838

  Korsunska, N E ^a,b   Tarasov, I ^a   Kushnirenko, V ^b   Ostapenko, S ^a  

^a UNIVERSITY OF SOUTH FLORIDA   (United States)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL GROWTH; PARAMETER ESTIMATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; THERMAL EFFECTS; THERMOANALYSIS;

RAMAN IMAGING; THERMAL ACTIVATION; THERMALLY STIMULATED LUMINESCENCE (TSL);

PHOTOLUMINESCENCE;

EID: 3142685341     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/7/009     Document Type: Article

References (16)

1. Goldberg Yu, Levinshtein M and Rumyantsev S 2001 Silicon carbide (SiC) Properties of Advanced Semiconductor Materials (New York: Wiley) pp 93-147
2. Carter C H et al 1999 Mater. Sci. Eng. B 61-62 1
3. Tajima H Tanaka M and Hoshino N 2002 Mater. Sci. Forum 389-393 597
4. Weingärtner R, Wellmann P J, Bickermann M, Hofmann D, Straubinger T L and Winnacker A 2002 Appl. Phys. Lett. 80 70
5. Stibal R, Müller S, Jantz W, Pozina G, Magnusson B and Ellison A 2003 Phys. Stat. Sol. c 0 1013
6. Mermoux M, Crisci A and Baillet F 2003 Mater. Sci. Forum 433-436 353
7. Ostapenko S, Suleimanov Yu M, Tarasov I, Lulu S and Saddow S E 2002 J. Phys.: Condens. Matter 14 13381
8. McKeever S W S 1985 Thermoluminescence of Solids (Cambridge: Cambridge University Press) p 376
9. Suleimanov Yu M et al 2003 Mater. Sci. Forum 433-436 59
10. Halperin A and Braner A A 1960 Phys. Rev. 117 408
11. Schroder D K 1998 Semiconductor Material and Device Characterization (New york: Wiley) p 79, 97
12. Ikeda M, Matsunami H and Tanaka T 1980 Phys. Rev. B 22 2842
13. Lauer V, Brémond G, Souifi A, Guillot G, Chourou K, Anikin M, Madar R, Clerjaud B and Naud C 1999 Mater. Sci. Eng. B 61-62 248
14. Sridhara S G, Clemen L L, Devaty R P, Choyke W J, Larkin D J, Kong H S, Troffer T and Pensl G 1998 J. Appl. Phys. 83 7909
15. Stiasny Th and Helbig R 1996 Silicon Carbide and Related Materials 1995 Proc. 6th Int. Conf. p 389
16. Devaty R P and Choyke W J 1997 Phys. Stat. Sol. a 162 5