Dynamic simulation of toggle mode MRAM operating field margin

IEEE Transactions on Magnetics

Volumn 43, Issue 6, 2007, Pages 2337-2339

  Wang, Shengyuan ^b   Fujiwara, Hideo ^a,c   Dou, Jian ^c   Li, Zhanjie ^b   Huai, Yiming ^b  

^a IEEE

^b Grandis Inc   (United States)

^c UNIVERSITY OF ALABAMA   (United States)

Author keywords

Landau Lifshitz (LL) equation; Magnetic random access memory (MRAM); Operating field margin; Toggle mode

Indexed keywords

ANTIFERROMAGNETISM; COMPUTER SIMULATION; MAGNETIC FIELD EFFECTS; RANDOM ACCESS STORAGE; SWITCHING THEORY;

LANDAU-LIFSHITZ (LL) EQUATION; MAGNETIC RANDOM ACCESS MEMORY (MRAM); NANOMAGNETIC DEVICES;

MAGNETIC STORAGE;

EID: 34249012326     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2007.893321     Document Type: Article

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