High-speed dynamics, damping, and relaxation times in submicrometer spin-valve devices

Journal of Applied Physics

Volumn 87, Issue 9 III, 2000, Pages 7070-7072

  Russek, Stephen E ^a   Kaka, Shehzaad ^a   Donahue, Michael J ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001533012     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.372934     Document Type: Article

References (10)

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2. R. H. Koch et al., Phys. Rev. Lett. 81, 4512 (1998).
3. C. D. Olson and A. V. Pohm, J. Appl. Phys. 29, 274 (1958).
4. W. Dietrich, W. E. Proebster, and P. Wolf, IBM J. Res. Dev. 4 189 (1960).
5. W. K. Hiebert, A. Stankiewicz, and M. R. Freeman, Phys. Rev. Lett. 79, 1134 (1997).
6. T. J. Silva, C. S. Lee, T. M. Crawford, and C. T. Rogers, J. Appl. Phys. 85, 7849 (1999).
7. S. E. Russek, J. O. Oti, S. Kaka, and E. Y. Chen, J. Appl. Phys. 85, 4773 (1999).
8. Micromagnetic simulations were done using the NIST OOMMF modeling package (http://math.nist.gov/oommf/). The 0.8 and 0.1 μm devices were simulated using a cell size of 10 and 3 nm, respectively. The shape of the 0.8 μm devices was taken from atomic force microscopy images.
9. The variation of the damping constant is similar to that seen in dynamical measurements of single-layer films (see, for instance, Ref. 6).
10. H. B. Callen, J. Phys. Chem. Solids 4, 256 (1958).