Toggle magnetoresistance random access memory based on magnetostatically coupled bilayers

Journal of Magnetism and Magnetic Materials

Volumn 295, Issue 3, 2005, Pages 246-250

  Wang, Shengyuan ^a   Fujiwara, Hideo ^a   Sun, Min ^a  

^a UNIVERSITY OF ALABAMA   (United States)

Author keywords

Magnetostatic coupling; MRAM; Toggle switch

Indexed keywords

ANTIFERROMAGNETISM; ASPECT RATIO; MAGNETIC COUPLINGS; MAGNETIC FIELDS; MAGNETIC STORAGE; MAGNETORESISTANCE; MAGNETOSTATICS; THICKNESS MEASUREMENT;

BILAYERS; MAGNETORESISTANCE RANDOM ACCESS MEMORY (MRAM); MAGNETOSTATIC COUPLING; TOGGLE SWITCH;

RANDOM ACCESS STORAGE;

EID: 23744435379     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2005.01.012     Document Type: Article

References (11)

1. J.M. Daughton Thin Solid Film 216 1996 162
2. S.S.P. Parkin, K.P. Roche, M.G. Samant, P.M. Rice, and R.B. Beyers J. Appl. Phys. 85 1999 5828
3. L. Savtchenko, A.A. Korki, B.N. Engel, N.D. Rizzo, J.A. Janesky, US Patent No. 6,545,906 B1, April 2003.
4. S.V. Pietambaram, et al., GE-03, Ninth Joint MMM/INTERMAG Conference, 2004.
5. B.N. Engel, et al., GE-05, Ninth Joint MMM/INTERMAG Conference, 2004.
6. H. Fujiwara, S.-Y. Wang, and M. Sun Trans. Magn. Soc. Japan 4 2004 121
7. S.-Y. Wang, and H. Fujiwara J. Magn. Magn. Mater. 286C 2005 27
8. D.C. Worledge Appl. Phys. Lett. 84 2004 2847
9. D.C. Worledge Appl. Phys. Lett. 84 2004 4559
10. E. Goto, N. Hayashi, T. Miyashita, and K. Nakagawa J. Appl. Phys. 36 1965 2951
11. B.D. Cullity, Introduction to Magnetic Materials, Addison-Wesley, Reading, MA, 1972, pp. 49-61.