MgO-based tunnel junction material for high-speed toggle magnetic random access memory

IEEE Transactions on Magnetics

Volumn 42, Issue 8, 2006, Pages 1935-1939

  Dave, Renu W ^a   Steiner, G ^a   Slaughter, J M ^a   Sun, J J ^a   Craigo, B ^a   Pietambaram, S ^a   Smith, K ^a   Grynkewich, G ^a   DeHerrera, M ^a   Akerman J ^a   Tehrani, S ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

Magnetic random access memory (MRAM); Magnetic tunnel junction (MTJ); MgO; Toggle switching; Tunneling magnetoresistance (TMR)

Indexed keywords

COUPLINGS; ELECTRIC BREAKDOWN; MAGNESIA; MAGNETIC PROPERTIES; MAGNETORESISTANCE; OPTIMIZATION; OXIDATION; RANDOM ACCESS STORAGE;

MAGNETIC RANDOM ACCESS MEMORY (MRAM); MAGNETIC TUNNEL JUNCTION (MTJ); TOGGLE SWITCHING; TUNNELING MAGNETORESISTANCE (TMR);

TUNNEL JUNCTIONS;

EID: 33746900455     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2006.877743     Document Type: Article

References (10)

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