Interface reactions at TiN/HfSiON gate stacks: Dependence on the electrode structure and deposition method

Science and Technology of Advanced Materials

Volumn 8, Issue 3, 2007, Pages 219-224

  Yoshida, Shiniti ^a   Watanabe, Yasumasa ^a   Kita, Yuuki ^a   Shimura, Takayoshi ^a   Watanabe, Heiji ^a   Yasutake, Kiyoshi ^a   Akasaka, Yasushi ^b   Nara, Yasuo ^b   Yamada, Keisaku ^c  

^a OSAKA UNIVERSITY   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^c WASEDA UNIVERSITY   (Japan)

Author keywords

Electrical degradation; Hafnium silicate; High k gate dielectrics; Interface reaction; Metal electrode; Thermal stability; Titanium nitride

Indexed keywords

DEPOSITION; ELECTRODES; HAFNIUM COMPOUNDS; SURFACE TENSION; THERMODYNAMIC STABILITY; TITANIUM NITRIDE;

ELECTRICAL DEGRADATION; HAFNIUM SILICATE; INTERFACE REACTION; METAL ELECTRODES;

GATE DIELECTRICS;

EID: 34248995220     PISSN: 14686996     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.stam.2006.12.007     Document Type: Article

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