Lanthanide impurity level location in GaN, AlN, and ZnO

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6473, Issue , 2007, Pages

  Dorenbos, P ^a   Van Der Kolk, E ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

AlN; GaN; Lanthanides; Localized states; ZnO

Indexed keywords

DOPING (ADDITIVES); ELECTRON ENERGY LEVELS; ENERGY GAP; GALLIUM NITRIDE; IMPURITIES; LUMINESCENCE; SEMICONDUCTOR MATERIALS; SOLID SOLUTIONS;

LANTHANIDE DOPED SEMICONDUCTORS; LOCALIZED STATES; WIDEBAND SEMICONDUCTORS;

RARE EARTH ELEMENTS;

EID: 34248682667     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.698977     Document Type: Conference Paper

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