Enhancement effect of Tb-related luminescence in Al xGa 1-xN with the AlN molar fraction 0 ≤ x ≤ 1

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 5, 2005, Pages 863-867

  Wakahara, A ^a   Nakanishi, Y ^a   Fujiwara, T ^a   Yoshida, A ^a   Ohshima, T ^b   Kamiya, T ^b  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LUMINESCENCE INTENSITY; LUMINESCENCE PROPERTIES; MOLAR FRACTION; THERMAL QUENCHING;

COMPOSITION; ENERGY TRANSFER; LOW TEMPERATURE EFFECTS; LUMINESCENCE; QUENCHING; TERBIUM;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 25444459106     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200461430     Document Type: Conference Paper

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