3 W - Broad area lasers and 12 W - bars with conversion efficiencies up to 40% at 650 nm

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 2006, Pages 37-38

  Sumpf, B ^b   Zorn, M ^b   Staske, R ^b   Fricke, J ^b   Ressel, P ^b   Ginolas, A ^b   Paschke, K ^b   Erbert, G ^a,b   Weyers, M ^b   Trankle G ^a,b  

^a IEEE

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POWER UTILIZATION; LASER BEAMS;

CONVERSION EFFICIENCIES; LASER BARS;

SEMICONDUCTOR LASERS;

EID: 41549115560     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/islc.2006.1708074     Document Type: Conference Paper

References (6)

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2. http://catalog.osram-os.com/media/_en/Graphics/00029998_0.pdf
3. J.S. Osinski, B. Lu, H. Zhao, B. Schmidt, "'High-power continuous-wave operation of 630 nm-band laser arrays"; Electronics Letters 34, 2336-2337 (1998)
4. D. Imanishi, Y. Sato, K. Naganuma, S. Ito, S. Hirata, "7W operation of 644 nm wavelength laser diode arrays with index-guided structure"; Electronics Letters 41, 1172-1173 (2005)
5. B. Sumpf, M. Zorn, R. Staske, J. Fricke, P. Ressel, G. Erbert, M. Weyers, G. Tränkle, .,High-efficient 650 nm laser bars with an output power of about 10 W and a wall-plug efficiency of 30%" "Novel In-Plane Semiconductor Lasers V" edited by Carmen Mermelstein and David P. Bour; Proceedings SPIE Vol. 6133, 78-85 (2006)
6. P. Ressel, G. Erbert, U. Zeimer, K. Häusler, G. Beister, B. Sumpf, A. Klehr, G. Tränkle, .,Novel Passivation Process far the Mirror Facets of High-Power Semiconductor Diode Lasers", IEEE Photonics Technology Letters 17, 962 - 964 (2005)