Narrow-width photoluminescence spectra of InGaN quantum wells grown on GaN (0001) substrates with misorientation toward [11̄00] direction

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6473, Issue , 2007, Pages

  Tachibana, Koichi ^a   Nago, Hajime ^a   Nunoue, Shin Ya ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

GaN substrates; InGaN; Micro photoluminescence; Quantum wells

Indexed keywords

GALLIUM NITRIDE; GROWTH (MATERIALS); OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

GAN SUBSTRATES; INGAN; MICRO PHOTOLUMINESCENCE; MISORIENTATION ANGLE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34248634021     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.699662     Document Type: Conference Paper

References (9)

1. S. Nakamura and G. Fasol, The Blue Laser Diode, Springer, Heidelberg, 1997.
2. I. Akasaki and H. Amano, "Crystal growth and conductivity control of group III nitride semiconductors and their application to short wavelength light emitters," Jpn. J. Appl. Phys. 36, pp. 5393-5408, 1997.
3. K. Motoki, T. Okahisa, N. Matsumoto, M. Matsushima, H. Kimura, H. Kasai, K. Takemoto, K. Uematsu, T. Hirano, M. Nakayama, S. Nakahata, M. Ueno, D. Hara, Y. Kumagai, A. Koukitu, and H. Seki, "Preparation of large free-standing GaN substrates by hydride vapor phase epitaxy using GaAs as a starting substrate," Jpn. J. Appl. Phys. 40, pp. L140-L143, 2001.
4. T. Kozaki, H. Matsumura, Y. Sugimoto, S. Nagahama, and T. Mukai, "High-power and wide wavelength range GaN-based laser diodes," Proc. SPIE 6133, pp. 61330601-61330612, 2006.
5. T. Nishida, H. Saito, and N. Kobayashi, "Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN," Appl. Phys. Lett. 79, pp. 711-712, 2001.
6. K. Tachibana, Y. Harada, S. Saito, S. Nunoue, H. Katsuno, C. Hongo, G. Hatakoshi, and M. Onomura, "Reciprocal space mapping of x-ray diffraction intensity of GaN-based laser diodes grown on GaN substrates," Mat. Res. Soc. Symp. Proc. 798, pp. 799-803, 2004.
7. K. Tachibana, H. Nago, and S. Nunoue, "Extremely smooth surface morphology of GaN-based layers on misoriented GaN substrates for high-power blue-violet lasers," phys. stat. sol. (c) 3, pp. 1819-1822, 2006.
8. D. Kapolnek, S. Keller, R. Vetury, R. D. Underwood, P. Kozodoy, S. P. DenBaars, and U. K. Mishra, "Anisotropic epitaxial lateral growth in GaN selective area epitaxy," Appl. Phys. Lett. 71, pp. 1204-1206, 1997.
9. 0.94N multiple-quantum-well laser diode lased at 400 nm," Appl. Phys. Lett. 79, pp. 341-343, 2001.