Metal gates for 0.15 μm CMOS and beyond

European Solid-State Device Research Conference

Volumn 13-15 Sept. 1999, Issue , 1999, Pages 148-151

  Webster, M N ^a   Roes, R F M ^a   Van Brandenburg, A C M C ^a   Klootwijk, J H ^a   Zegers, A T A ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATE DIELECTRICS; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOS DEVICES; TIN OXIDES; TITANIUM NITRIDE;

C-V MEASUREMENT; CMOS PROCESSS; DOUBLE LAYERS; GATE LEAKAGE CURRENT DENSITY; GATE OXIDE THICKNESS; POLYSILICON GATES; TIN METAL GATE; ULTRA THIN GATE OXIDE;

TITANIUM COMPOUNDS;

EID: 84907885743     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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3. J.C. Hu et al., p.825, IEOM, 1997.
4. T. Aazwa et al., J. Elect. Soc, Vol. 145, p. 1297, 1998.
5. H. Matsuhashi et al., Jpn. J. Appl. Phys., Vol. 33, p. 1293, 1994.
6. P. Lundgen, JAP, V.8S, p.2229, 1999.