Study of GaN thin layers subjected to high-temperature rapid thermal annealing

Semiconductors

Volumn 32, Issue 10, 1998, Pages 1048-1053

  Katsavets, N I ^a   Laws, G M ^b   Harrison, I ^b   Larkins, E C ^b   Benson, T M ^b   Cheng, T S ^b   Foxon, C T ^b  

^a ZAO Semiconductor Devices   (Russian Federation)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040409956     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187579     Document Type: Article

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