Tunable light emission and decaying process of photoluminescence from a nanostructured Si-in-SiNx film

Journal of Luminescence

Volumn 126, Issue 2, 2007, Pages 536-540

  Ma, L B ^a   Song, R ^a   Huang, R ^a   Du, Y ^a   Ye, J P ^b   Lin, Y ^b   Wang, Y Q ^a  

^a INSTITUTE OF PHYSICS   (China)

^b INSTITUTE OF CHEMISTRY   (China)

Author keywords

Decay time; Energy selected excitation; Photoluminescence; Quantum confinement effect; Silicon nanoparticles

Indexed keywords

AMORPHOUS FILMS; LIGHT EMISSION; NANOPARTICLES; OPTICAL INTERCONNECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUANTUM CONFINEMENT; SILICON NITRIDE;

DECAY TIME; ENERGY SELECTED EXCITATION; TIME RESOLVED ANALYSIS;

PHOTOLUMINESCENCE;

EID: 34248574603     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2006.10.002     Document Type: Article

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