A comparison of various surface finishes and the effects on the early stages of pore formation during high field etching of SiC

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 743-746

  Ke, Y ^a   Moisson, C ^b   Gaan, S ^c   Feenstra, R M ^c   Devaty, R P ^a   Choyke, W J ^a  

^a UNIVERSITY OF PITTSBURGH   (United States)

^b SAVOIE TECHNOLAC   (France)

^c CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

Chemical mechanical polishing (CMP); Etching; Photoelectrochemical; Porous; Surface

Indexed keywords

CHEMICAL MECHANICAL POLISHING; ETCHING; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; SURFACE MORPHOLOGY;

PHOTOELECTROCHEMICAL ETCHING; SPATIAL DISTRIBUTION;

POROUS MATERIALS;

EID: 34248513789     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.743     Document Type: Conference Paper

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