Effect of deposition temperature on ITO thin films prepared by RF magnetron sputtering

Guangdianzi Jiguang/Journal of Optoelectronics Laser

Volumn 16, Issue 12, 2005, Pages 1429-1432

  Zhao, Tou Ling ^a,b   Ren, Bing Yan ^b   Zhao, Long ^b   Wang, Wen Jing ^a  

^a Beijing Solar Energy Research Institute   (China)

^b HEBEI UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Annealing; Indium tin oxide; Magetron sputtering; Resistivity

Indexed keywords

ANNEALING; DEPOSITION; ELECTRIC PROPERTIES; FABRICATION; GRAIN SIZE AND SHAPE; INDIUM COMPOUNDS; MAGNETRON SPUTTERING; MORPHOLOGY; OPTICAL PROPERTIES; PRESSURE; TEMPERATURE; TRANSPARENCY; VACUUM;

DEPOSITION TEMPERATURE; INDIUM TIN OXIDE; RESISTIVITY; VACUUM ANNEALING;

SEMICONDUCTING FILMS;

EID: 33644666357     PISSN: 10050086     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (11)

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